Exposure apparatus

ABSTRACT

An exposure apparatus which exposes a substrate to a pattern. The apparatus includes a channel which causes pure water to flow as a coolant, a temperature adjustment unit which adjusts a temperature of the pure water flowing in the channel, and a coolant generation device which generates the pure water flowing in the channel as the coolant with a resistivity of not less than 1 MΩ·cm.

FIELD OF THE INVENTION

The present invention relates to an exposure apparatus used in asemiconductor manufacturing process, and is particularly suitable fortemperature control in the apparatus.

BACKGROUND OF THE INVENTION

As a conventional cooling method performed for an alignment device in anexposure apparatus, a temperature-managed fluorine-based inert coolantis generally circulated through a heating member such as a driving unitand a temperature adjustment device, as shown in FIG. 8. In the priorart shown in FIG. 8, the alignment device in the exposure apparatus isillustrated. A measurement distance 13 to an object 10 to be aligned isdetected by using a measurement mirror 11 and a position measurementmeans 12 such as a laser interferometer, thereby measuring the positionof the object 10 at high precision. A linear motor 1 is controlled by acontroller 14 and a driver 15 on the basis of the measurement result.The linear motor 1 made up of stator 1 a and rotor 1 b is kept at apredetermined temperature by circulating a fluorine-based inert coolant2 through a temperature adjustment device 6 and channel 7 in atemperature adjustment room. As disclosed in Japanese Patent Laid-OpenNo. 10-309071, the linear motor 1 has a jacket structure in which acoolant directly recovers the heat generated by a coil. As the coolant,the fluorine-based inert coolant 2 is used because of the followingreasons.

-   1. The fluorine-based inert coolant is a chemically stable liquid,    does not degrade or decay, and does not require any maintenance.-   2. The fluorine-based inert coolant does not induce any rust and    form any rust in a pipe or at a joint. Even if this coolant leaks,    it hardly influences the interior of the apparatus.-   3. The electrical insulating property of the fluorine-based inert    coolant is very high (about 10¹⁵ Ω·cm). Directly cooling a coil or    the like does not impair the insulating property.

A circulation cooling technique for a coolant other than thefluorine-based inert coolant adopts a gas coolant such as air orcarbonic acid gas, an antifreeze coolant such as oil or brine (ethyleneglycol-based or propylene glycol-based), or water containing variousadditives such as a rust preventive and preservative.

The fluorine-based inert coolant has advantages described in the priorart, but also has the following disadvantages.

-   1. The unit cost is very high.-   2. The warming potential is high.-   3. The heat capacity (specific heat×density) per unit volume is as    small as about ½ that of water.

The unit cost of the fluorine-based inert coolant is about 10 to 50times higher those of additive-containing water or various coolants suchas brine. This increases the cost of an exposure apparatus whichrequires a large amount of coolant. The fluorine-based inert coolantdoes not decompose even in air owing to high chemical stability, and ispointed out to have a very high GWP (Global Warming Potential). The useof the inert coolant in an open system is therefore being reviewed, andfor the use of the inert coolant in a closed circulation system, analternate coolant is being examined for a long term.

In addition to this, a higher-output driving unit and higher coolingability are demanded especially for the exposure apparatus. To improvethe cooling ability, it is possible to (1) increase the coolant flowrate, (2) decrease the coolant temperature, or (3) increase the heatcapacity of the coolant. As the coolant flow rate increases, necessarypump ability increases with its square. The pump becomes bulky, and ahigher flow rate is difficult to ensure. If the flow rate of acirculating coolant near an object to be aligned as an object subjectedto temperature control is set higher than the conventional value, thecoolant forms turbulence, vibrating a pipe or the like. The vibrationsfunction as alignment disturbance, decreasing the alignment precisionand further the exposure precision. For this reason, the flow rate ofthe coolant cannot be simply increased. At an excessively low coolanttemperature, air around the coolant path becomes nonuniform intemperature in comparison with the entire atmosphere. An interferometerlaser for position measurement fluctuates in output, and the measurementprecision and exposure precision decrease. From this, the use of analternate coolant with a large heat capacity in place of thefluorine-based inert coolant has been examined.

Examples of such large-heat-capacity coolant are water (pure water)containing a rust preventive or preservative, and brine (coolantprepared by diluting an ethylene glycol-based or propylene glycol-basedantifreeze with water). These coolants are actually used in variousmachine tools. If, however, water or brine is circulated as a coolantfor a long time, rust forms on a metal surface of a pipe or the likethat contacts the coolant, or the coolant decays due to breeding ofunwanted bacteria or the like. To prevent this, water or brinecontaining a rust preventive or preservative is generally used as acoolant. Most rust preventives, however, contain a metal salt such assodium ions or amine-based ions in order to dissolve the rustpreventives in water. Many preservatives contain an amine-basedcomponent in addition to an alcoholic component in order to enhance thesterilization effect.

In addition, these coolants do not have the electrical insulatingproperty of the conventional coolant, i.e., fluorine-based inertcoolant, and the conventional structure of directly cooling anelectrical component cannot be employed. Hence, a coolant which canensure an electrical insulating property is required for the exposureapparatus instead of the fluorine-based inert coolant.

A semiconductor factory must maintain a very clean space. Contaminationof the atmosphere not only by a fine organic matter such as dust butalso by metal ions or amine-based organic ions must be minimized interms of the semiconductor manufacturing process.. Considering this, acoolant or the like used in the exposure apparatus preferably containsno metal salt or amine-based ions which act as contaminants(contamination) in case the coolant leaks from a pipe or the like. Ifthese contaminants are at negligible level for the factory, but thecoolant leaking from a pipe or the like attaches to a precision surfaceplate or the like, the coolant volatilizes to leave the additivecomponent on the surface of the precision surface plate. The additivecomponent may then influence the surface precision of the surface plate.In many cases, the precision surface plate serves as an alignmentreference in the alignment device of the exposure apparatus. Thedecrease in precision seriously influences the alignment precision andexposure precision. Demands have therefore arisen for a coolant whichdoes not leave any residue even upon volatilization.

In order to obtain a coolant having a large heat capacity and electricalinsulating property, it has been examined to adjust the temperature inthe exposure apparatus via pure water managed to 1 MΩ·cm or more (0.1μS/cm or less). This also means that pure water does not contain anycontaminant which adversely affects the manufacturing process of thesemiconductor factory.

Implementation of such a process and coolant requires a pure waterdevice and accessory device (deoxidation device or sterilization devicesuch as an UV filter), resulting in a large equipment space.

Addition of a rust preventive or preservative also poses a maintenanceproblem. To maintain the effects of these additives, the concentrationsof the additives must be managed. Since the concentration cannot alwaysbe monitored, it must be periodically checked at least every one or twomonths. This increases the maintenance burden of the semiconductormanufacturing apparatus, and further increases the burden on the user.To avoid the increase in burden, it is preferable to always monitormaintenance and management of the rust prevention effect.

In general, quality management of the coolant requires periodicmaintenance. Most exposure apparatuses operate for 24 hours, and themaintenance burden is desirably decreased as much as possible.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an exposureapparatus which can be made compact and can suppress metal rust thatforms in a pipe or the like in the presence of a coolant withoutadversely affecting a clean semiconductor factory.

It is another object of the present invention to provide an exposureapparatus which can suppress decay of a coolant without adverselyaffecting a clean semiconductor factory.

It is still another object of the present invention to provide anexposure apparatus which can employ pure water as a coolant for coolinga driving unit or the like, is compact, and comprises a small-sizealignment device and the like.

To achieve the above objects, according to the present invention, thereis provided an exposure apparatus which exposes a substrate to a patternon a master, comprising a temperature adjustment unit which adjusts, toa predetermined temperature, a coolant supplied from a coolantgeneration device which generates a coolant with a predeterminedquality, and a control unit which controls a temperature in theapparatus by circulating the coolant adjusted to the predeterminedtemperature.

It is preferable that the coolant include distilled water or pure water,and be supplied from the coolant generation device arranged outside theexposure apparatus. The pure water has a resistivity of 1 MΩ·cm or more.The pure water includes deoxidized water.

The pure water preferably has a dissolved oxygen amount of 1 mg/l orless. The deoxidized water includes deaerated water having undergonedeaeration processing.

If the coolant is water in the above arrangement, the heat capacity ofthe coolant can be set large to provide a cooling effect. The use ofdistilled or pure water as a coolant can prevent contamination of afactory atmosphere even if the coolant leaks outside the apparatus.Distilled or pure water used does not leave any residue even uponvolatilization. Even if the coolant leaks from a pipe or the like withinthe apparatus, the alignment precision and exposure precision do notdecrease.

By supplying part or all of pure water from a factory or the like, theexposure apparatus can be made compact, and a cooling system using purewater can be implemented. Since the resistivity of pure water suppliedfrom the factory or the like is set to 1 MΩ·cm or more, insulation ofthe coil and reliability can be ensured. The arrangement of supplyingdeoxidized (deaerated) pure water from the factory or the like resultsin a compact deoxidization unit and thus a very compact exposureapparatus. As long as the amount of oxygen dissolved in deoxidized purewater is 1 mg/l or less, the deoxidation unit need not be installed inthe exposure apparatus, further downsizing the exposure apparatus.

The exposure apparatus further comprises at least one of a deoxidationunit which performs deoxidation processing for the coolant and a UVsterilization unit which performs UV sterilization processing for thecoolant. The deoxidation unit preferably has a deaeration function ofremoving gas from the coolant. Alternatively, the deoxidation unit fillsa vessel which temporarily stores the coolant with gas having a partialoxygen pressure of almost 0. The temperature adjustment unit has afunction of suppressing an increase in a dissolved oxygen amount of thecoolant within the exposure apparatus. The increase in the dissolvedoxygen amount of the coolant is suppressed by filling a vessel whichtemporarily stores the coolant in said temperature adjustment unit withinert gas, or blowing inert gas into the coolant in the vessel.

Since the exposure apparatus with the above arrangement comprises thedeoxidation unit which performs deoxidation processing for the coolant,the rust prevention effect in the apparatus can be obtained withoutadding any contaminant which is unpreferable to a manufacturing processin a semiconductor factory. The coolant preservation effect can also beexpected, and the sterilization unit can be downsized. When the coolantis distilled or pure water, a contaminant which is unpreferable to themanufacturing process in the semiconductor factory can be completelyeliminated, and the rust prevention effect can be enhanced. Moreover,the preservation effect can be expected, and the entire apparatus can begreatly downsized.

The temperature adjustment unit suppresses an increase in the dissolvedoxygen amount of the coolant in the exposure apparatus. For example, theincrease in the dissolved oxygen amount of the coolant is suppressed byfilling a vessel which temporarily stores the coolant in the temperatureadjustment unit with inert gas, or blowing inert gas into the coolant.The effect of deoxidation processing by the deoxidation unit can bemaintained, increasing the processability of the deoxidation unit anddownsizing the apparatus.

Since the exposure apparatus comprises the UV sterilization unit whichperforms UV sterilization processing for the coolant, the coolantpreservation effect can be obtained without adding any contaminant whichis unpreferable to the manufacturing process in the semiconductorfactory. Deoxidation processing for the coolant can provide a greaterpreservation effect. When the coolant is distilled or pure water, thepreservation effect can be further enhanced.

It is preferable that the control unit comprise a channel which flowsthe coolant at the predetermined temperature, a supply pipe whichsupplies a coolant generated by the coolant generation device to thechannel, and an exhaust pipe which exhausts the coolant outside thechannel, and that the control unit circulate the coolant through a stagedriving unit for relatively moving one or both of the master and thesubstrate to align them, thereby cooling the stage driving unit.

It is preferable that the exposure apparatus further comprise a qualitydetection unit which detects the quality of the coolant, and that asupply amount of the coolant be controlled on the basis of a detectionresult of the quality detection unit.

The present invention can also be applied to a semiconductor devicemanufacturing method comprising the steps of installing manufacturingapparatuses for various processes including any one of the exposureapparatuses in a semiconductor manufacturing factory, and manufacturinga semiconductor device by a plurality of processes using themanufacturing apparatuses. The method preferably further comprises thesteps of connecting the manufacturing apparatuses by a local areanetwork, and communicating information about at least one of themanufacturing apparatuses between the local area network and an externalnetwork outside the semiconductor manufacturing factory. It ispreferable that a database provided by a vendor or user of the exposureapparatus be accessed via the external network to obtain maintenanceinformation of the manufacturing apparatus by data communication, orthat data communication be performed between the semiconductormanufacturing factory and another semiconductor manufacturing factoryvia the external network to perform production management.

The present invention can also be applied to a semiconductormanufacturing factory comprising manufacturing apparatuses for variousprocesses including any one of the exposure apparatuses, a local areanetwork which connects the manufacturing apparatuses, and a gatewaywhich allows the local area network to access an external networkoutside the factory, wherein information about at least one of themanufacturing apparatuses can be communicated.

According to the present invention, there may also be provided amaintenance method for any one of the exposure apparatuses installed ina semiconductor manufacturing factory, characterized by comprising thesteps of causing a vendor or user of the exposure apparatus to provide amaintenance database connected to an external network of thesemiconductor manufacturing factory, permitting access to themaintenance database from the semiconductor manufacturing factory viathe external network, and transmitting maintenance informationaccumulated in the maintenance database to the semiconductormanufacturing factory via the external network.

The present invention may also be characterized in that any one of theexposure apparatuses further comprises a display, a network interface,and a computer which executes network software, and maintenanceinformation of the exposure apparatus can be communicated via a computernetwork. It is preferable that the network software provide on thedisplay a user interface for accessing a maintenance database which isprovided by a vendor or user of the exposure apparatus and connected tothe external network of a factory where the exposure apparatus isinstalled, and enable obtaining information from the database via theexternal network.

Other objects and advantages besides those discussed above shall beapparent to those skilled in the art from the description of a preferredembodiment of the invention which follows. In the description, referenceis made to accompanying drawings, which form apart thereof, and whichillustrate an example of the invention. Such example, however, is notexhaustive of the various embodiments of the invention, and thereforereference is made to the claims which follow the description fordetermining the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing the cooling system of an exposure apparatusaccording to the first embodiment of the present invention;

FIG. 2A is a view showing the cooling system of an exposure apparatusaccording to the second embodiment of the present invention;

FIG. 2B is a view showing the cooling system of an exposure apparatusaccording to the third embodiment of the present invention;.

FIG. 3 is a view showing the cooling system of an exposure apparatusaccording to the fourth embodiment of the present invention;

FIG. 4 is a perspective view showing an example of a linear motor as adriving unit used in the exposure apparatus according to the presentinvention;

FIG. 5 is a sectional view showing the stator of the linear motor inFIG. 4;

FIG. 6 is a view showing an example of the linear motor as the drivingunit used in the exposure apparatus according to the present invention,and a cooling system for the linear motor;

FIGS. 7A and 7B are views schematically showing a temperature adjustmentdevice according to the embodiment of the present invention;

FIG. 8 is a view showing a conventional cooling system;

FIG. 9 is a front view showing an exposure apparatus according to thefifth embodiment of the present invention;

FIG. 10 is a conceptual diagram of a semiconductor device productionsystem using the apparatus according to the embodiment, viewed from anangle;

FIG. 11 is a conceptual diagram of the semiconductor device productionsystem using the apparatus according to the embodiment, viewed fromanother angle;

FIG. 12 is a particular example of user interface;

FIG. 13 is a flowchart showing device fabrication process; and

FIG. 14 is a flowchart showing a wafer process.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 1 is a view showing an example of a cooling system according to thefirst embodiment of the present invention. The same reference numeralsas in FIG. 8 denote the same parts. This embodiment exemplifies thecooling arrangement of an alignment device in an exposure apparatus incorrespondence with the prior art shown in FIG. 8. In the prior art, afluorine-based inert coolant is circulated between a driving unit and atemperature adjustment device. In the first embodiment, pure water 3having undergone one or both of sterilization processing by a UV(UltraViolet) sterilization device 43 and deoxidation processing by adeoxidation device 44 is used as a coolant and circulated through aclosed space. A pure water device 42 and the UV sterilization device 43are inserted in the channel of the circulating pure water 3 in additionto the deoxidation device 44 and a temperature adjustment device 46. Abypass valve 20 is inserted in a bypass-side channel 7 b, whereas awater quality sensor 25 is inserted in a channel 7 on the exit side ofthe temperature adjustment device 46. The deoxidation device 44 ismainly formed from a deaeration device. In general, the deaerationdevice deaerates gas dissolved in a coolant to the low-partial-pressurevacuum side through a vacuum deaeration film. This can decrease thedissolved concentrations of almost all gases in addition to oxygendissolved in the coolant.

The water quality sensor 25 detects the purity, oxygen concentration,and the like. The purity is detected by measuring the conductivity ofpure water. When the water quality reaches a predetermined level orless, a valve controller 28 controls the opening degree of the bypassvalve 20 on the basis of the water quality detection result of the waterquality sensor 25. Accordingly, the valve controller 28 controls theflow rate of pure water flowing through the pure water device 42, UVsterilization device 43, and deoxidation device 44. The valve controller28 also comprises an error output function of stopping the wholeapparatus depending on the water quality.

FIG. 4 is a perspective view showing a linear motor as an example of thedriving unit, and FIG. 5 is a sectional view showing the stator of thelinear motor. A linear motor 1 is made up of a rotor B with a magnet 30,and a stator A with coils 31 a, 31 b, and 31 c serving as heatingelements. As shown in FIG. 5, the stator A incorporates the coils 31 a,31 b, and 31 c, and has a jacket structure with a jacket 34 whichsurrounds them. A member 35, members 39 a and 39 b, and the like forefficiently bringing the pure water 3 into contact with the coils 31 a,31 b, and the like are fixed to the inner surface of the jacket 34. Thepure water 3 directly contacts the coils 31 a, 31 b, and 31 c supportedby support members 38 a, 38 b, and 38 c via members 37, and efficientlydeprives the coils of heat-generated by them.

Another example of the driving unit is illustrated in FIG. 6. FIG. 6 isa view showing an example of a single-coil linear motor. In this linearmotor, permanent magnets 21 a, 21 b, 21 c, and 21 d are fixed to theinner surfaces of yokes 22, and face each other. A coil 23 is supportedin a coil support 24 between the permanent magnets 21 a and 21 b and thepermanent magnets 21 c and 21 d. In this linear motor, similar to thelinear motor shown in FIGS. 4 and 5, the pure water 3 as a coolant issupplied into the coil support 24, directly contacts the coil 23, andradiates heat generated by the coil 23. A flow rate sensor 26,temperature sensor 27, and filter 48 are inserted in the channel 7 inaddition to the water quality sensor 25.

Outputs from the water quality sensor 25 and flow rate sensor 26 aresent to the valve controller 28, which controls opening/closing ofsupply and exhaust valves 16 and 18 and controls the water quality andflow rate of the circulating pure water 3. An output from thetemperature sensor 27 is sent to a controller 14, which controls thetemperature adjustment device 46 via a cooling control means 4 andcontrols the temperature or flow rate of the pure water 3. The flow ratesensor 26, temperature sensor 27, and filter 48 can also be applied tothe first embodiment shown in FIG. 1.

It is generally known that deoxidation processing performed for acoolant by a deoxidation device prevents rust of a metal in contact withthe coolant. From the reaction formula describing rusting of a metal:Fe+(½)O₂+7H₂O=Fe(H₂O)₆ ²⁺+2OH⁻necessary conditions of rusting a metal are the following three: {circleover (1)} water exists on the surface of iron, {circle over (2)} oxygenis dissolved in water, and {circle over (3)} ionization of iron andreduction of oxygen in electrically equal part to it occursimultaneously. This also applies to other metals. Hence, when water isused as a coolant, removal of oxygen dissolved in water can preventformation of any rust in principle. As for {circle over (3)}, if astrong electrolytic salt such as NaCl is dissolved in a coolant, thesalt mediates ionization. In this case, ionization of iron (rust ofiron) need not occur at the same time as ionization of oxygen, whicheliminates any conditional restrictions. Hence, rust can be suppressedmuch more than a usual state by removing an electrolytic salt in acoolant. It is also known that chloride ions or sulfate ions are relatedto the growth of rust. In terms of rust prevention, distilled water fromwhich any electrolytic salt is removed or pure water having passedthrough an ion-exchange filter or the like is preferable.

As a method of sterilizing a coolant, a simple method of adding apreservative to the coolant is generally employed and it has agreat-effect. However, the use of this method in the exposure apparatusposes a problem due to the following reasons.

-   1. The preservative often contains a component undesirable to a    manufacturing process in a semiconductor factory.-   2. If pure water is used to give a coolant an insulating property,    the insulating property is degraded by an additive such as a    preservative.-   3. In order to maintain the sterilization effect, a sample must be    periodically checked, increasing the maintenance burden.

For these reasons, the exposure apparatus adopts, as a sterilizationmethod, sterilization by a so-called UV sterilization device whichsterilizes a coolant by ultraviolet radiation. No additive needs to beadded to the coolant, and the process in the semiconductor factory isnot adversely affected. Especially when pure water is used to ensure aninsulating property in a coolant, like the first embodiment, the coolantcan be sterilized without degrading the insulating property of purewater (resistivity of pure water) by addition to pure water. In the useof the UV sterilization device, maintenance suffices to be performed atthe apparatus level (exchange of an ultraviolet lamp or the like). Themaintenance cycle and method are clear, thus reducing the maintenanceburden.

With the use of pure water as a coolant, a contaminant undesirable inthe semiconductor factory can be recovered within the pure water device.Even if the coolant leaks outside the apparatus, contamination of thesemiconductor factory can be prevented. If contaminants are atnegligible level for the factory, but the coolant leaking from a pipe orthe like attaches to a precision surface plate or the like, the coolantvolatilizes to leave the additive component on the surface of theprecision surface-plate. The additive component may influence thesurface precision of the surface plate. However, distilled or pure waterused as a coolant does not leave any residue even if the coolant leaksand volatilizes in the apparatus. Hence, the coolant does not influencethe precision of the surface plate.

The rust prevention effect is given by deoxidation processing inconsideration of contamination of a coolant in the use of a generallyused rust preventive. Rust preventives are roughly classified into twotypes: rust preventives containing metal salts and rust preventivescontaining amine-based salts. These salts are, however, unpreferable inthe manufacturing process in the semiconductor factory, as describedabove. For example, deposition of a metal salt on a wafer decreases theyield. An amine-based salt adversely affects a resist. Since a coolantcirculates through a closed system, no problem arises unless an accidentsuch as leakage of the coolant occurs. In consideration of emergency,sometimes it is not preferred to add such contaminant for the rustprevention effect in terms of the reliability of the apparatus. Sincethe coolant is distilled or pure water from which an organic matter as afeed of bacteria in the coolant is removed, breeding of bacteria can besuppressed to a certain degree. In addition, performing deoxidationprocessing for the coolant is very effective for bacteria which requireoxygen to live. As a result, any device for sterilization processing orthe like can be omitted or the apparatus can be downsized.

As for the maintenance, deoxidation processing has a merit in comparisonwith a method using an additive. In many cases, the exposure apparatusoperates for 24 hours, and it is desirable in terms of the reliabilityto constantly check whether the rust prevention effect has beenmaintained. The method using deoxidation processing can check the systemby using a general measurement device such as a dissolved oxygenanalyzer. The method using an additive generally requires a periodicsample check, which increases the maintenance burden.

For this reason, UV sterilization processing is done to remove dissolvedoxygen, and distilled or pure water free from any contaminant iscirculated. This is very suitable for cooling in the exposure apparatuswhich operates in the semiconductor factory. In this case, the gist ofthe present invention can be achieved without particularly arranging thepure water device 42 as far as the coolant channel is satisfactorilycleaned and distilled or pure water free from any contaminant is usedfrom the beginning.

If the coolant contacts oxygen after deoxidation processing by thedeoxidation device 44, the coolant dissolves in oxygen to increase thedissolved oxygen amount even upon deoxidation processing. Many generaltemperature adjustment devices comprise vessels for storing apredetermined amount of coolant in order to maintain the temperature athigh precision. At this portion, a port for supplying or exhausting thecoolant is often connected, and the coolant generally contacts air. In aconventional temperature adjustment device, oxygen in air within thevessel undesirably dissolves in the coolant. In the temperatureadjustment device 46 according to the present invention, as shown inFIG. 7A, a gas space within a vessel 51 is purged with nitrogen toprevent the coolant from contacting oxygen. Instead of purging the spacewithin the vessel 51, as shown in FIG. 7B, nitrogen may be forciblyblown and dissolved in the coolant in the vessel 51 via a blow pipe 52,and the partial pressure of the coolant with respect to gas may beincreased to inhibit dissolution of oxygen. The gist of the presentinvention can also be achieved by not forming any gas space within thevessel 51, or by devising the shape of the vessel 51 to decrease aportion which comes into contact with gas. Positively adopting thearrangement in FIG. 7A or 7B will provide the deoxidation processingeffect. For example, the contact area is increased such that the coolantin the vessel positively contacts purge gas (made of inert gas which hasa partial oxygen pressure of almost 0 and is hard to dissolve in water).Alternatively, the coolant is stirred and bubbled (bubbling) to decreasethe amount of oxygen dissolved in the coolant. This is based on theprinciple that the amount of gas dissolved in liquid is proportional tothe partial pressure of contact gas, and that the coolant is broughtinto contact with gas having a partial oxygen pressure of almost 0 todecrease the amount of oxygen dissolved in the coolant to 0. With thiseffect, the temperature adjustment device may be controlled to functionas a deoxidation device without the mediacy of any deaeration device.

Second Embodiment

FIG. 2A is a view showing an example of a cooling system according tothe second embodiment of the present invention. The same referencenumerals as in FIG. 1 denote the same parts. In the second embodiment, asupply valve 16 is opened to always slightly supply pure water suppliedfrom a factory via a supply pipe 17, and an exhaust valve 18 is openedto exhaust and exchange circulating pure water 3 via an exhaust pipe 19in order to maintain the level of the circulating pure water 3, easilysuppress degradation (decay) of the pure water 3 or the like, and keepthe dissolved oxygen amount at a low level. In general, a semiconductorfactory manufactures a large amount of pure water having undergonedeoxidation processing at high level (high resistivity) in order to usepure water for wafer cleaning or the like. In the semiconductor factory,therefore, the unit cost of pure water is much lower than that ofgenerally acquired pure water. As one method of maintaining pure waterwith a small dissolved oxygen amount, a circulating coolant is dilutedwith a proper amount of pure water with a small dissolved oxygen amountor high level (high resistivity) pure water at a proper timing. In thiscase, a deoxidation device 44 or pure water device 42 can be greatlydownsized or omitted. The factory may always supply a predeterminedamount of pure water or may supply a predetermined amount of pure waterevery predetermined time. Alternatively, the factory may supply purewater after the water quality reaches a given criterion or less. In anycase, the gist of the present invention can be achieved. When thefactory supplies a predetermined amount of high-level pure water everytime, every predetermined time, or after the water quality reaches apredetermined criterion or less, decay of pure water can also beprevented. As a result, a means for preventing decay (e.g., adding apreservative or using a sterilization device such as an UV filter) canbe omitted or downsized.

To supply high-level pure water from the factory when the water qualityreaches a predetermined criterion or less, the flow rate of pure watersupplied from the factory can be controlled by controlling the openingdegree of a flow rate sensor 26 by a valve controller 28 on the basis ofthe water quality detection result of a water quality sensor 25 whichdetects the water quality in a channel 7. The water quality sensor 25detects the purity, oxygen concentration, and the like. The purity isdetected by measuring the conductivity of pure water. The secondembodiment adopts a bypass valve 20 which opens/closes a bypass-sidechannel 7 b which does not pass through the deoxidation device 44. Theflow rate of pure water flowing through the pure water device 42, UVsterilization device 43, and deoxidation device 44 can also becontrolled by controlling the bypass valve 20 by the valve controller 28on the basis of the water quality detection result of the water qualitysensor 25. In this embodiment, similar to the arrangement shown in FIG.6, a flow rate sensor 26, temperature sensor 27, and filter 48 may beinserted in the channel 7 in addition to the water quality sensor 25.

Third Embodiment

FIG. 2B is a view showing an example of a cooling system according tothe third embodiment of the present invention. In FIG. 2B, the samereference numerals as in FIG. 8 denote the same parts.

Implementation of the cooling systems shown in the structural views ofFIGS. 1 and 2A requires a large-size pure water device 42, UVsterilization device (UV filter) 43, and deoxidation device 44 in orderto maintain the water quality of circulating pure water. The results offurther examination revealed that simply circulating pure water in thearrangement as shown in FIG. 1 or 2A requires an apparatus almost twiceas large as a conventional one. In order to minimize the sizes ofvarious devices which maintain the water quality of pure water used fortemperature adjustment, pure water is supplied from a semiconductorfactory which has large amounts of high-level pure water and deaeratedpure water, thereby downsizing the apparatus. That is, the use of purewater with high water quality can decrease the burden on various devicesand downsize them. FIG. 2B shows this arrangement.

In the cooling system shown in FIG. 2B, a supply valve 16 is opened toalways slightly supply pure water supplied from a factory via a supplypipe 17, and an exhaust valve 18 is opened to exhaust and exchangecirculating pure water 3 via an exhaust pipe 19 in order to maintain theresistivity of the circulating pure water 3 and easily suppressdegradation (decay) of pure water 3 or the like. In general, asemiconductor factory manufactures a large amount of high-level(high-resistivity) pure water in order to use pure water for cleaning ofa wafer serving as a substrate. At the same time, the semiconductorfactory manufactures a large amount of pure water from which dissolvedoxygen is reduced by the deoxidation device 44 in order to preventformation of any oxide film on a wafer. In the semiconductor factory,the unit cost of pure water (deaerated pure water) is much lower thanthat of generally acquired pure water. As one method of maintaining purewater, a circulating pure water coolant is diluted with a proper amountof high-level (high-resistivity) pure water at a proper timing. In thecooling system of FIG. 2B, the pure water device 42 can be made muchcompact than those in the arrangements of FIGS. 1 and 2A, or can also beomitted. If pure water supplied from the factory is deaerated purewater, the deaeration (deoxidation) device 44 in the exposure apparatuscan be greatly downsized or omitted. The factory may supply apredetermined amount of pure water every time, every predetermined time,or after the water quality of circulating pure water reaches apredetermined criterion or less.

Moreover, decay of pure water can also be prevented when the factorysupplies a predetermined amount of high-level pure water every time,every predetermined time, or after the water quality detected by a waterquality sensor 25 which is connected to the exit of a temperatureadjustment device 46 and detects the water quality in a channel 7reaches a predetermined criterion or less. A means for preventing decay(e.g., adding a preservative or using a sterilization device such as anUV sterilization device 43) can be omitted or downsized.

The third embodiment also employs a bypass valve 20 which opens/closes abypass-side channel 7 b which does not pass through the pure waterdevice 42. A valve controller 28 controls the bypass valve 20 on thebasis of the water quality detection result of the water quality sensor25. The valve controller 28 can, therefore, control the flow rate ofpure water flowing through the pure water device 42 and deoxidationdevice 44. The water quality sensor 25 detects the purity, oxygenconcentration, and the like. The purity is detected by measuring theconductivity of pure water. When the factory supplies high-level purewater after the water quality of circulating pure water reaches apredetermined criterion or less, the valve controller 28 can alsocontrol the flow rate of pure water supplied from the factory bycontrolling the opening degree of the supply valve 16 on the basis ofthe water quality detection result of the water quality sensor 25.

In general, when pure water is circulated, the resistivity graduallydecreases due to ions eluted from a material which forms a coolantchannel such as a pipe. A wire which forms a coil is prepared bycovering a copper wire with an insulating layer of polyimide or thelike. The JIS (Japanese Industrial Standard) standard recognizes thepresence of so-called pinholes on the copper wire that are small holesnot covered with the insulating layer. This means that a short circuitmay occur between these pinholes via a coolant for a low coolantresistivity. Even at a portion coated with the insulating layer, thedielectric breakdown voltage of the wire depends on the material (air ora coolant) in contact with the wire. From this, the dielectric breakdownvoltage can be kept high when the coolant is air or an inert coolantwith a high insulating property, but becomes low when the insulatingproperty, i.e., resistivity of the coolant is low. In an arrangement inwhich the coolant directly contacts the coil, the resistivity of thecoolant must be maintained at a predetermined value or more. In order tomaintain the resistivity of a pure water coolant at a predeterminedvalue or more, the third embodiment adopts the pure water device 42which can ensure the resistivity for a long term. By arranging the purewater device for the coil, even a contaminant unwanted in thesemiconductor factory can be recovered within the pure water device. Incase of coolant leakage, contamination of the semiconductor factory canbe prevented.

In this embodiment, only part of circulating pure water flows throughthe pure water device. The flow rate of pure water which flows throughthe pure water device is determined in accordance with the level(resistivity) of pure water and the processability of the pure waterdevice. Depending on the arrangement, all of pure water may flow throughthe pure water device.

Fourth Embodiment

FIG. 3 is a view showing an example of a cooling system according to thefourth embodiment of the present invention. The third embodiment is animprovement of the second embodiment. All of pure water with a smalldissolved oxygen amount is supplied from a factory, and this coolantundergoes temperature adjustment. Pure water 3 is supplied to an objectsubjected to temperature adjustment to recover generated heat. The purewater 3 is returned as waste water to the factory or reused as low-levelpure water. In this case, pure water at a predetermined criterion ormore is supplied from the factory. A deoxidation device 44 and purewater device can be omitted or greatly downsized. If pure water suppliedfrom the factory is deaerated (deoxidized) pure water, the deoxidationdevice 44 in the exposure apparatus can be omitted or greatly downsized.Similar to the second embodiment, no attention needs to be paid todegradation (decay) of the coolant, and thus a means for preventingdelay can be omitted or further downsized. Accordingly, the overallexposure apparatus can become very compact.

Fifth Embodiment

The fifth embodiment of the present invention will be described byexemplifying a scanning exposure apparatus. FIG. 9 is a front viewshowing the main structure of the scanning exposure apparatus accordingto the fifth embodiment of the present invention. In FIG. 9, a lensbarrel surface plate 96 is supported on a floor or base 91 via a damper98. The lens barrel surface plate 96 supports a reticle stage surfaceplate 94, and a projection optical system 97 interposed between areticle stage 95 and a wafer stage 93.

The wafer stage 93 is supported on a stage surface plate 92 supported onthe floor or base 91 via a plurality of mounts 90. The wafer stage 93supports a wafer serving as a substrate, holds it by a chuck (notshown), and aligns it. The reticle stage 95 is supported on the reticlestage surface plate 94 supported on the lens barrel surface plate 96.The reticle stage 95 can move with holding a reticle serving as a masterwhich bears a circuit pattern. Exposure light which transfers thepattern of the reticle on the reticle stage 95 to the wafer on the waferstage 93 is emitted by an illumination optical system 99.

The wafer stage 93 is scanned in synchronism with the reticle stage 95.During scanning of the reticle stage 95 and wafer stage 93, theirpositions are continuously detected by interferometers and fed back tothe driving units of the reticle stage 95 and wafer stage 93. With thisoperation, the scanning start positions of the reticle stage 95 andwafer stage 93 can be accurately synchronized, and the scanning speed ina constant-speed scanning region can be controlled at high precision.While the wafer stage 93 and reticle stage 95 are scanned with respectto the projection optical system 97, the wafer is exposed to a reticlepattern, transferring the circuit pattern.

The circulation system of the cooling system according to the presentinvention can be applied to any fluid of a cooling device for coolingthe projection optical system 97, reticle stage 95, wafer stage 93,mount 90, chuck, and the like in the exposure apparatus.

Embodiment of Semiconductor Production System

Next, an example of semiconductor device (semiconductor chip of IC, LSIor the like, a liquid crystal panel, a CCD, a thin film magnetic head, amicromachine etc.) production system using the apparatus of the presentinvention will be described. The system performs maintenance servicessuch as trouble shooting, periodical maintenance or software deliveryfor fabrication apparatuses installed in a semiconductor manufacturingfactory, by utilizing a computer network outside the fabricationfactory.

FIG. 10 shows the entire system cut out from an angle. In the figure,numeral 1101 denotes the office of a vendor (apparatus maker) ofsemiconductor device fabrication apparatuses. As the semiconductorfabrication apparatuses, apparatuses in the semiconductor fabricationfactory for various processes such as preprocess apparatuses(lithography apparatuses including an exposure apparatus, a resistprocessing apparatus and an etching apparatus, a heat processingapparatus, a film forming apparatus, a smoothing apparatus and the like)and postprocess apparatuses (an assembly apparatus, an inspectionapparatus and the like) are used. The office 1101 has a host managementsystem 1108 to provide a maintenance database for the fabricationapparatus, plural operation terminal computers 1110, and a local areanetwork (LAN) 1109 connecting them to construct an Intranet or the like.The host management system 1108 has a gateway for connection between theLAN 1109 and the Internet 1105 as an external network and a securityfunction to limit access from the outside.

On the other hand, numerals 1102 to 1104 denote fabrication factories ofsemiconductor makers as users of the fabrication apparatuses. Thefabrication factories 1102 to 1104 may belong to different makers or maybelong to the same maker (e.g., preprocess factories and postprocessfactories). The respective factories 1102 to 1104 are provided withplural fabrication apparatuses 1106, a local area network (LAN) 1111connecting the apparatuses to construct an Intranet or the like, and ahost management system 1107 as a monitoring apparatus to monitoroperating statuses of the respective fabrication apparatuses 1106. Thehost management system 1107 provided in the respective factories 1102 to1104 has a gateway for connection between the LAN 1111 and the Internet1105 as the external network. In this arrangement, the host managementsystem 1108 on the vendor side can be accessed from the LAN 1111 in therespective factories via the Internet 1105, and only limited user(s) canaccess the system by the security function of the host management system1108. More particularly, status information indicating the operatingstatuses of the respective fabrication apparatuses 1106 (e.g. problem offabrication apparatus having trouble) is notified from the factory sideto the vendor side via the Internet 1105, and maintenance informationsuch as response information to the notification (e.g. informationindicating measure against the trouble, or remedy software or data),latest software, help information and the like is received from thevendor side via the Internet. The data communication between therespective factories 1102 to 1104 and the vendor 1101 and datacommunication in the LAN 1111 of the respective factories are performedby using a general communication protocol (TCP/IP). Note that as theexternal network, a private-line network (ISDN or the like) with highsecurity against access from outsiders may be used in place of theInternet.

Further, the host management system is not limited to that provided bythe vendor, but a database constructed by the user may be provided onthe external network, to provide the plural user factories with accessto the database.

FIG. 11 is a conceptual diagram showing the entire system of the presentembodiment cut out from another angle different from that in FIG. 10. Inthe above example, the plural user factories respectively havingfabrication apparatuses and the management system of the apparatusvendor are connected via the external network, and data communication isperformed for production management for the respective factories andtransmission of information on at least one fabrication apparatus. Inthis example, a factory having fabrication apparatuses of plural vendorsis connected with management systems of the respective vendors of thefabrication apparatuses via the external network, and data communicationis performed for transmission of maintenance information for therespective fabrication apparatuses. In the figure, numeral 1201 denotesa fabrication factory of fabrication apparatus user (semiconductordevice maker). In the factory fabrication line, fabrication apparatusesfor various processes, an exposure apparatus 1202, a resist processingapparatus 1203 and a film forming apparatus 1204, are used. Note thatFIG. 11 shows only the fabrication factory 1201, however, actuallyplural factories construct the network. The respective apparatuses ofthe factory are connected with each other by a LAN 1206 to construct anIntranet, and a host management system 1205 performs operationmanagement of the fabrication line.

On the other hand, the respective offices of vendors (apparatus makers),an exposure apparatus maker 1210, a resist processing apparatus maker1220, a film forming apparatus maker 1230 have host management systems1211, 1221 and 1231 for remote maintenance for, the apparatuses, and asdescribed above, the systems have the maintenance database and thegateway for connection to the external network. The host managementsystem 1205 for management of the respective apparatuses in the userfabrication factory is connected with the respective vendor managementsystems 1211, 1221 and 1231 via the Internet or private-line network asan external network 1200. In this system, if one of the fabricationapparatuses of the fabrication line has a trouble, the operation of thefabrication line is stopped. However, the trouble can be quickly removedby receiving the remote maintenance service from the vendor of theapparatus via the Internet 1200, thus the stoppage of the fabricationline can be minimized.

The respective fabrication apparatuses installed in the semiconductorfabrication factory have a display, a network interface and a computerto execute network access software stored in a memory and deviceoperation software. As a memory, an internal memory, a hard disk or anetwork file server may be used. The network access software, includinga specialized or general web browser, provides a user interface screenimage as shown in FIG. 12 on the display. An operator who manages thefabrication apparatuses in the factory checks the screen image andinputs information of the fabrication apparatus, a model 1401, a serialnumber 1402, a trouble case name 1403, a date of occurrence of trouble1404, an emergency level 1405, a problem 1406, a remedy 1407 and aprogress 1408, into input fields on the screen image. The inputinformation is transmitted to the maintenance database via the Internet,and appropriate maintenance information as a result is returned from themaintenance database and provided on the display. Further, the userinterface provided by the web browser realizes hyper link functions 1410to 1412 as shown in the figure, and the operator accesses more detailedinformation of the respective items, downloads latest version softwareto be used in the fabrication apparatus from a software librarypresented by the vendor, and downloads operation guidance (helpinformation) for the operator's reference. The maintenance informationprovided from the maintenance database includes the information on theabove-described present invention, and the software library provideslatest version software to realize the present invention.

Next, a semiconductor device fabrication process utilizing theabove-described production system will be described. FIG. 13 shows aflow of the entire semiconductor fabrication process. At step S1(circuit designing), a circuit designing of the semiconductor device isperformed. At step S2 (mask fabrication), a mask where the designedcircuit pattern is formed is fabricated. On the other hand, at step S3(wafer fabrication), a wafer is fabricated using silicon or the like. Atstep S4 (wafer process) called preprocess, the above mask and wafer areused. An actual circuit is formed on the wafer by lithography. At stepS5 (assembly) called postprocess, a semiconductor chip is formed byusing the wafer at step S4. The postprocess includes processing such asan assembly process (dicing and bonding) and a packaging process (chipsealing). At step S6 (inspection), inspections such as an operation testand a durability test are performed on the semiconductor deviceassembled at step S5. The semiconductor device is completed throughthese processes, and it is shipped (step S7). The preprocess and thepostprocess are independently performed in specialized factories, andmaintenance is made for these factories by the above-described remotemaintenance system. Further, data communication is performed forproduction management and/or apparatus maintenance between thepreprocess factory and the postprocess factory via the Internet orprivate-line network.

FIG. 14 shows a more detailed flow of the wafer process. At step S11(oxidation), the surface of the wafer is oxidized. At step S12 (CVD), aninsulating film is formed on the surface of the wafer. At step S13(electrode formation), electrodes are formed by vapor deposition on thewafer. At step S14 (ion implantation), ions are injected into the wafer.At step S15 (resist processing), the wafer is coated with photoresist.At step S16 (exposure), the above-described exposure apparatusexposure-transfers the circuit pattern of the mask onto the wafer. Atstep S17 (development), the exposed wafer is developed. At step S18(etching), portions other than the resist image are etched. At step S19(resist stripping), the resist unnecessary after the etching is removed.These steps are repeated, thereby multiple circuit patterns are formedon the wafer. As maintenance is performed on the fabrication apparatusesused in the respective steps by the above-described remote maintenancesystem, trouble is prevented, and even if it occurs, quick recovery canbe made. In comparison with the conventional art, the productivity ofthe semiconductor device can be improved.

The present invention is not limited to the above embodiments andvarious changes and modifications can be made within the spirit andscope of the present invention. Therefore, to appraise the public of thescope of the present invention, the following claims are made.

1-21. (canceled)
 22. An exposure apparatus, comprising: an exposuredevice to expose a substrate to a pattern; a temperature adjustmentchamber which adjusts a temperature of pure water used in said exposuredevice as a coolant; a supply channel which supplies the pure water froma pure water generation device placed outside said exposure device tosaid temperature adjustment chamber; and an exhaust channel whichexhausts the coolant outside said temperature adjustment chamber. 23.The apparatus according to claim 22, wherein said pure water generationdevice is placed inside a factory in which said exposure device isinstalled, and also supplies the pure water to an apparatus other thansaid exposure apparatus.
 24. The apparatus according to claim 22,wherein the pure water supplied from said pure water generation deviceto said temperature adjustment chamber has a resistivity of not lessthan 1 MΩ·cm.
 25. The apparatus according to claim 22, wherein the purewater supplied from said pure water generation device to saidtemperature adjustment chamber is deoxidized water.
 26. The apparatusaccording to claim 25, wherein the deoxidized water has a dissolvedoxygen amount of not more than 1 mg/l.
 27. The apparatus according toclaim 25, wherein the deoxidized water is a degassed water.
 28. Theapparatus according to claim 22, further comprising a stage device whichmoves a wafer or reticle, wherein the pure water is used for cooling adriving part of said stage device.
 29. The apparatus according to claim22, further comprising a second pure water generation device placed insaid temperature adjustment chamber.